N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm

N-Channel PowerTrench? MOSFET 60V, 62A, 13.5m? Features ?rDS(ON)= 11.5m?(Typ.), VGS = 10V, ID= 62A ?Qg(tot) = 22nC (Typ.), VGS = 10V ? Low Miller Charge ?Low QRRBody Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? Mot

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無(wú)錫固電

N 溝道，PowerTrench? MOSFET，60V，62A，13.5mΩ

N-Channel PowerTrench? MOSFET, 60V, 62A, 13.5mΩ, \nFairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ?RDS(ON) = 11.5mΩ（典型值）@ VGS = 10V, ID = 62A\n?QG(tot) = 22nC（典型值）@ VGS = 10V\n?低米勒電荷\n?低 QRR體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101，以前的開(kāi)發(fā)類型為 82555;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

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BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.59 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電