N-Channel PowerTrench? MOSFET

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

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ISC

無錫固電

絲?。?strong>FDB075N15A；Package：D2-PAK；Channel Power Trench? MOSFET150V 110A, 7.5mΩ

Features -Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A -Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A -UIS Capability -RoHS Compliant -Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator - Primar

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ONSEMI

安森美半導(dǎo)體

N-Channel Power Trench? MOSFET

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FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，150V，130A，7.5mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 6.25m? （典型值）@ VGS = 10V, ID = 100A\n?快速開關(guān)\n?低柵極電荷，QG = 77nC（典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N 溝道PowerTrench? MOSFET 150V，110A，5.5mΩ

N-Channel Power Trench? MOSFET 150V, 110A, 5.5mΩ, Fairchild’s latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. ? 一般 rDS(on) = 5.5 mΩ（VGS=10V、ID=80A 時(shí)）\n?一般 Qg(tot) = 80nC（VGS = 10V、ID = 80A）\n?UIS 能力\n?符合 RoHS 標(biāo)準(zhǔn)\n?符合 AEC Q101 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體