N 溝道，PowerTrench? MOSFET，100V，214A，3.5mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 3.0m? （典型值）@ VGS = 10V, ID = 75A\n?快速開關(guān)速度\n?低柵極電荷，QG = 89nC（典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的 RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 100V, 214A, 3.5m廓

文件：291.96 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.046329 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.13792 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04074 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體