絲?。?strong>FDB031N08；Package：D2-PAK；N-Channel PowerTrench? MOSFET 75 V, 235 A, 3.1 mΩ

Features ? RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A ? Fast Switching Speed ? Low Gate Charge ? High Performance Trench Technology for Extremely Low RDS(on) ? High Power and Current Handling Capability ? RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild S

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ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 235A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

N-Channel PowerTrench? MOSFET 75V, 235A, 3.1m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? RDS(on) = 2.4m? ( Typ.)@ VGS = 10V, ID = 75A ? Fast switc

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FAIRCHILD

仙童半導(dǎo)體

N 溝道 PowerTrench? MOSFET 75V，235A，3.1mΩ

該 N 溝道 MOSFET 采用飛兆半導(dǎo)體的 PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 ?RDS(on) = 2.4m? （典型值）@ VGS = 10V, ID = 75A\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體