200V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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FAIRCHILD

仙童半導體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，200V，70A，35mΩ，TO-3P

UniFETTM MOSFET 是飛兆半導體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關性能和更高的雪崩能量強度。 該器件系列適用于開關電源轉換器應用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設備用鎮(zhèn)流器。 ?RDS(on) = 35m? （最大值）@ VGS = 10V, ID = 35A\n?低柵極電荷（典型值 66nC） \n?低 Crss（典型值 89pF） \n?100% 經(jīng)過雪崩擊穿測試;

ONSEMI

安森美半導體