DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體

N-Channel UniFETTM FRFET? MOSFET 500 V, 28 A, 175 mΩ

Features ? RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A ? Low Gate Charge (Typ. 80 nC) ? Low Crss (Typ. 38 pF) ? 100% Avalanche Tested ? Improved dv/dt Capability ? RoHS Compliant Applications ? PDP TV ? Uninterruptible Power Supply ? AC-DC Power Supply Description UniFETTM

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ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 28A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

N-Channel MOSFET 500V, 28A, 0.175廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

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FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 500V, 28A, 0.175廓

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，UniFETTM，F(xiàn)RFET?，500 V，28 A，175 mΩ，TO-3P

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。 UniFET FRFET? MOSFET 體二極管的反向恢復(fù)性能通過壽命控制方式得到加強(qiáng)。 其 trr 小于 100nsec 且反向 dv/dt 抗擾度為 15V/nsec，而一般的平面 MOSFET 產(chǎn)品分別為 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 體二極管性能具有重要作用的某些應(yīng)用中可消除多余的元件，并提高系統(tǒng)的可靠性。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功 ?RDS(on) = 140m? （典型值）@ VGS = 10V, ID = 14A\n?低柵極電荷（典型值 80nC） \n?低 Crss（典型值 38pF） \n?100% 經(jīng)過雪崩擊穿測(cè)試\n?提高了 dv/dt 處理能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體