600V N-Channel MOSFET

Description SuperFET? MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, pr

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FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無(wú)錫固電

N-Channel SuperFET MOSFET

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FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

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FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，7 A，600 mΩ，TO-220F

SuperFET?MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實(shí)現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級(jí)結(jié)（SJ）MOSFET 系列產(chǎn)品。這項(xiàng)技術(shù)專用于最小化傳導(dǎo)損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 ?650V @TJ = 150°C\n?典型值RDS(on) = 530mΩ\n?超低柵極電荷（典型值Qg = 23nC )\n?低有效輸出電容（典型值Coss.eff = 60pF )\n?100% 經(jīng)過(guò)雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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N-Channel SupreMOS? MOSFET 600 V, 6.8 A, 520 m廓

N-Channel SupreMOS? MOSFET 600 V, 6.8 A, 520 mΩ Description The SupreMOS? MOSFET is Fairchild Semiconductor?’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced te

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FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體