MOSFET – N-Channel

Features ? Typical rDS(on) = 66 m at VGS = 10 V, ID = 47 A ? Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A ? UIS Capability ? Qualified to AEC Q101 and PPAP Capable ? This Device is Pb?Free and is RoHS Compliant Applications ? Automotive On Board Charger ? Automotive DC/DC Converter

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ONSEMI

安森美半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

無錫固電

new generation of high voltage MOSFET

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FAIRCHILD

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FAIRCHILD

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FAIRCHILD

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FAIRCHILD

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N-Channel SuperFET FRFET MOSFET

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FAIRCHILD

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600V N-Channel MOSFET

文件：978.12 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體