DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體

N-Channel SuperFET? MOSFET

Description SuperFET? MOSFET is Fairchild Semiconductor?’s first genera tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technologyfor outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss,

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，35 A，98 mΩ，TO-247

SuperFET?MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實(shí)現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級(jí)結(jié)（SJ）MOSFET 系列產(chǎn)品。這項(xiàng)技術(shù)專用于最小化傳導(dǎo)損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 ?650V @TJ = 150°C\n?典型值RDS(on) = 79mΩ\n?超低柵極電荷（典型值Qg = 139nC )\n?低有效輸出電容（典型值Coss.eff = 340pF )\n?100% 經(jīng)過雪崩擊穿測(cè)試;

ONSEMI

安森美半導(dǎo)體

Discrete IGBT (High-Speed V series) 600V / 35A

Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit

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FUJI

富士通

Discrete IGBT (High-Speed V series) 600V / 35A

600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit

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FUJI

富士通

N-Channel Enhancement Mode MOSFET

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MICROSS