Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：56.45 Kbytes 頁數(shù)：6 Pages

NIEC

Schottky Barrier Diode

文件：788.65 Kbytes 頁數(shù)：7 Pages

KSS

京瓷

肖特基勢壘二極管(SBD)-肖特基勢壘二極管(SBD)

Kyocera

京瓷

Package：TO-220-3 全封裝，隔離接片；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 150V 10A TO-220 F

KSS

京瓷

SBD

文件：139.18 Kbytes 頁數(shù)：1 Pages

NI

恩艾

分立式半導(dǎo)體 肖特基勢壘二極管（SBD）

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making ?Low leakage current\n?High frequency operation \n?Epoxy Resin (UL94V-0 recognized);

Kyocera

京瓷