N-Channel SuperFET? II FRFET? MOSFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 54A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 77mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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MOSFET ??N-Channel, SUPERFET II, FRFET 650 V, 54 A, 77 m

Description SuperFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：425.08 Kbytes 頁數(shù)：10 Pages

ONSEMI

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N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

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N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel SuperFET II FRFET MOSFET

文件：695.37 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET? II，F(xiàn)RFET?，650 V，54 A，77 mΩ，TO-247

SuperFET? II MOSFET 是 Fairchild 利用電荷平衡技術(shù)實現(xiàn)出色的低導(dǎo)通電阻和更低柵極電荷性能的全新高壓超級結(jié)（SJ）MOSFET 系列產(chǎn)品。 這項技術(shù)專用于最小化導(dǎo)通損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。 因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 SuperFET II FRFET? MOSFET 優(yōu)化體二極管的反向恢復(fù)性能可去除額外元件并提高系統(tǒng)可靠性。 ?700 V @ TJ = 150°C\n?超低柵極電荷（典型值 Qg=126 nC）\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn)\n;

ONSEMI

安森美半導(dǎo)體