FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m廓

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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FAIRCHILD

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600V N-Channel MOSFET, FRFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：339.99 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

? FEATURES ? With TO-247 packaging ? With low gate drive requirements ? Easy to drive ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

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ISC

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絲?。?strong>FCH041N60F；Package：TO-247；MOSFET - N-Channel, SUPERFET II, FRFET 600 V, 76 A, 41 m

Description SUPERFET? II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide supe

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ONSEMI

安森美半導(dǎo)體

FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m廓

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：600.51 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET? III，F(xiàn)RFET?，600 V，76 A，41 mΩ，TO-247

SuperFET? II MOSFET 是飛兆利用電荷平衡技術(shù)實現(xiàn)出色的低導(dǎo)通電阻和更低柵極電荷性能的全新高壓超級結(jié) (SJ) MOSFET 系列產(chǎn)品。 這項技術(shù)專用于最小化導(dǎo)通損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。 因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 SuperFET II FRFET? MOSFET 優(yōu)化體二極管的反向恢復(fù)性能可去除額外元件，提高系統(tǒng)可靠性。 ?RDS(on)= 36mΩ（典型值）\n?超低柵極電荷（典型值 Qg=277nC)\n?低效輸出電容\n?100% 經(jīng)過雪崩擊穿測試;

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安森美半導(dǎo)體

600 V、47 A、36 mΩ、TO-247N 溝道 SuperFET?

SuperFET? II MOSFET 是飛兆利用電荷平衡技術(shù)實現(xiàn)出色的低導(dǎo)通電阻和更低柵極電荷性能的全新高壓超級結(jié) (SJ) MOSFET 系列產(chǎn)品。 ?典型值 RDS(on) = 36 mΩ（VGS = 10 V、ID = 38 A）\n?典型值 Qg(tot) = 267 nC（VGS = 10 V、ID = 38 A）\n? 低有效輸出電容（典型值 Coss(eff.) = 720 nF)\n?100%經(jīng)過雪崩測試\n? 符合 AEC Q101 標(biāo)準\n? 符合RoHS標(biāo)準;

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