N-Channel SuperFET MOSFET

Description SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

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ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

? FEATURES ? With TO-247 packaging ? Drain Source Voltage- : VDSS ≥ 650V ? Static drain-source on-resistance: RDS(on) ≤ 99m?@VGS=10V ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switc

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ISC

無錫固電

N 溝道 SuperFET? III MOSFET

SuperFET? III MOSFET 是 ON Semiconductor 利用電荷平衡技術實現(xiàn)出色的低導通電阻和更低柵極電荷性能的全新高壓超級結 (SJ) MOSFET 系列產品。 這項先進技術專用于最小化傳導損耗，提供卓越的開關性能，并承受極端 dv/dt 額定值。 因此，SuperFET III MOSFET 非常適用于系統(tǒng)小型化和高效化的各種功率系統(tǒng)。 ?700 V（TJ=150°C 時）\n? Higher system reliability at low temperature operation\n?超低柵極電荷（典型值 Qg = 136 nC）\n? Lower switching loss\n?低有效輸出電容（典型值 Coss(eff.) = 1154 pF）\n? Lower switching loss\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n?典型值 RDS(on) = 35.4 mΩ\n?100% 經過雪崩擊穿測試\;

ONSEMI

安森美半導體

N-Channel SuperFET MOSFET

Description SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：927.6 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體