600V N-Channel MOSFET

Description SuperFET? is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi

文件：947.92 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：353.35 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，4.6 A，950 mΩ，DPAK

SuperFET? MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實(shí)現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級(jí)結(jié)（SJ）MOSFET 系列產(chǎn)品。 這項(xiàng)技術(shù)專用于最小化傳導(dǎo)損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。 因此，SuperFET MOSFET產(chǎn)品非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX電源及工業(yè)電源應(yīng)用。 ?650V @TJ = 150°C\n?典型值 RDS(on) = 810mΩ\n?超低柵極電荷（典型值 Qg = 16nC )\n?低有效輸出電容（典型值 Coss.eff = 32pF )\n?100%經(jīng)過雪崩測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

600V N-Channel MOSFET

Description SuperFET? is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi

文件：947.92 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

Description SuperFET? is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi

文件：947.92 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

Automotive DC/DC Converter for HEV

文件：358.41 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，SuperFET?，600 V，4.6 A，0.86 Ω

SuperFET? is ON Semiconductor proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching perf ? 600 V、4.6 A, 典型值Rds(on)= 860 m?（VGS= 10 V）\n? 超低柵極電荷（典型值Qg = 16 nC）\n?UIS 能力\n? 符合 RoHS 標(biāo)準(zhǔn)\n? 符合 AEC Q101 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體