600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：352.64 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK

SuperFET? MOSFET 是飛兆半導體第一代利用電荷平衡技術實現(xiàn)出色低導通電阻和更低柵極電荷性能的高壓超級結（SJ）MOSFET 系列產(chǎn)品。 這項技術專用于最小化傳導損耗并提供卓越的開關性能、dv/dt 額定值和更高雪崩能量。 因此，SuperFET MOSFET產(chǎn)品非常適合開關電源應用，如功率因數(shù)校正(PFC)、服務器/電信電源、平板電視電源、ATX電源及工業(yè)電源應用。 ?650V @TJ = 150°C\n?典型值 RDS(on) = 1.0Ω\n?超低柵極電荷（典型值 Qg = 12.8nC )\n?低有效輸出電容（典型值 Coss.eff = 32pF )\n?100%經(jīng)過雪崩測試\n?符合RoHS標準;

ONSEMI

安森美半導體

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：972.05 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：972.05 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導體

600V N-Channel Power MOSFET

- -\n封裝：TO-252;

Fortior

峰岹科技