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首頁 >FCB11N60>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
FCB11N60	文件：582.03 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：582.03 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60	文件：977 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：977 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60	文件：332.59 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：332.59 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
FCB11N60	文件：976.05 Kbytes Page：8 Pages	600V N-Channel MOSFET 文件：976.05 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60	文件：300 bytes Page：1 Pages	功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，11 A，380 mΩ，D2PAK SuperFET?MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實(shí)現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級(jí)結(jié)（SJ）MOSFET 系列產(chǎn)品。這項(xiàng)技術(shù)專用于最小化傳導(dǎo)損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 ?650V @TJ = 150°C\n?典型值RDS(on) = 320mΩ\n?超低柵極電荷（典型值Qg = 40nC )\n?低有效輸出電容（典型值Coss.eff = 95pF )\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);	ONSEMI 安森美半導(dǎo)體	ONSEMI
FCB11N60F	文件：332.6 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：332.6 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
FCB11N60F	文件：1.00473 Mbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：1.00473 Mbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60FTM	文件：1.00473 Mbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：1.00473 Mbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti 文件：298.83 Kbytes 頁數(shù)：14 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
FCB11N60TM	文件：977 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：977 Kbytes 頁數(shù)：8 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD

技術(shù)參數(shù)

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
600
VGS Max (V)：
±30
VGS(th) Max (V)：
5
ID Max (A)：
11
PD Max (W)：
125
RDS(on) Max @ VGS = 10 V(mΩ)：
380
Qg Typ @ VGS = 10 V (nC)：
40
Ciss Typ (pF)：
1148
Package Type：
D2PAK-3/TO-263-2

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	FCB11N60	FSC	1415+	TO-263	28500	全新原裝正品,優(yōu)勢(shì)熱賣	詢價(jià)
深圳市卓越微芯電子有限公司	FCB11N60	FAIRCHI	25+	TO-263	640	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FCB11N60	FAIRCHILD	24+	TO-263(D2PAK)	8866		詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	FCB11N60	FAIRCHILD	20+	TO-2632L(D2PAK)	36900	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市澳億芯電子科技有限公司	FCB11N60	fairchild	25+	to-263/d2-pak	32500	普通	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	FCB11N60	FAIRCHILD/仙童	23+	TO-2632L(D2PAK)	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	FCB11N60	FAIRCHILD/仙童	2022+	TO-263	12888	原廠代理終端免費(fèi)提供樣品	詢價(jià)
洪芯國(guó)際半導(dǎo)體（深圳）有限公司	FCB11N60	FCS	26+	TO263-7L	86720	全新原裝正品價(jià)格最實(shí)惠假一賠百	詢價(jià)
深圳市威雅利發(fā)展有限公司	FCB11N60	FSC	13+	TO236	100	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市賽特興科技有限公司	FCB11N60	ON	23+	TO-263	742	正規(guī)渠道,只有原裝!	詢價(jià)

更多FCB11N60供應(yīng)商更新時(shí)間2026-1-21 11:04:00

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