isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

N-Channel MOSFET 600V, 22A, 0.165W

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPREMOS?，F(xiàn)AST，600 V，22 A，165 mΩ，TO-3P

SupreMOS? MOSFET 是飛兆半導(dǎo)體的下一代高壓超級結(jié)（SJ）技術(shù)，該技術(shù)采用區(qū)別于傳統(tǒng) SJ MOSFET 產(chǎn)品的深溝槽填充工藝。這項(xiàng)先進(jìn)技術(shù)和精密的工藝控制提供了最低的 Rsp on-resistance（導(dǎo)通電阻規(guī)格），卓越的開關(guān)性能和耐用性。SupreMOS MOSFET 技術(shù)適用于高頻開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 ?BVDSS = 650V @ TJ = 150°C\n?RDS(on) = 140m? （典型值）@ VGS = 10V，ID = 11A\n?超低柵極電荷（典型值Qg = 45nC )\n?低有效輸出電容（典型值Coss.eff = 196.4pF )\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)

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FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 600V, 22A, 0.165W

Description The SupreMOS? MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無錫固電