絲?。?strong>FBP；Package：SMBFlat；1500 W TVS in SMB Flat

Features ? Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) ? Flat and thin package: 1 mm ? Stand-off voltage range: from 5 V to 64 V ? Unidirectional type ? Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C ? Operating Tj max: 175 °C ? High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fbp1608-2l/marking.html">FBP1608-2L；Package：B；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?a target="_blank" title="Marking" href="/fbp1608-2l/marking.html">FBP1608-2L；Package：B；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲印：FBP1608-2L；Package：C；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?a target="_blank" title="Marking" href="/fbp1608-2l/marking.html">FBP1608-2L；Package：C；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?a target="_blank" title="Marking" href="/fbp1608-2l/marking.html">FBP1608-2L；Package：T；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲印：FBP1608-2L；Package：T；1-Line, Uni-directional, Transient Voltage Suppressor

文件：381.05 Kbytes 頁數(shù)：6 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 頁數(shù)：4 Pages

AITSEMI

創(chuàng)瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 頁數(shù)：4 Pages

AITSEMI

創(chuàng)瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 頁數(shù)：4 Pages

AITSEMI

創(chuàng)瑞科技