Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half?bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high?voltage process and common?mode noise canceling technique to provide stable operation of high?side driver under high d

文件：348.99 Kbytes 頁(yè)數(shù)：19 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>FAD8253MX；Package：SOIC-14NB；Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half?bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high?voltage process and common?mode noise canceling technique to provide stable operation of high?side driver under high d

文件：348.99 Kbytes 頁(yè)數(shù)：19 Pages

ONSEMI

安森美半導(dǎo)體

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half?bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high?voltage process and common?mode noise canceling technique to provide stable operation of high?side driver under hi

文件：284.44 Kbytes 頁(yè)數(shù)：19 Pages

ONSEMI

安森美半導(dǎo)體

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shi ? Qualified to AEC Q100\n? PPAP capable\n? Floating channel for boostrap operation to +1200V\n? Allowable negative VS transient down to -15V at VBS=15V\n? Built-in common mode dV/dt noise canceling circuit\n? Separate power and signal ground for enhanced immunity against high dI/dt\n? Matched propag;

ONSEMI

安森美半導(dǎo)體

Package：14-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR） 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：1200V 2.5A HALF-BRIDGE GATE DRIV

ONSEMI

安森美半導(dǎo)體

1200V Half-Bridge Gate Driver, 2.5 A Source/3.4 A Sink, SOIC-8 package

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shi ? Qualified to AEC Q100\n? PPAP capable\n? Floating channel for boostrap operation to +1200V\n? Allowable negative VS transient down to -15V at VBS=15V\n? Built-in common mode dV/dt noise canceling circuit\n? Separate power and signal ground for enhanced immunity against high dI/dt\n? Matched propag;

ONSEMI

安森美半導(dǎo)體