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          首頁 >F6N80>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          F6N80

          800V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

          文件:661.2 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導體

          F6N80

          N-Channel QFET? MOSFET 800 V, 5.5 A, 2.5 廓

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:1.01814 Mbytes 頁數(shù):10 Pages

          FAIRCHILD

          仙童半導體

          F6N80

          Ultra low gate charge

          Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

          文件:831.19 Kbytes 頁數(shù):15 Pages

          STMICROELECTRONICS

          意法半導體

          F6N80

          Advanced Power MOSFET(220V, 2.0OHM, 4.5A)

          文件:263.38 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          F6N80

          N-Channel QFET MOSFET

          文件:855.56 Kbytes 頁數(shù):10 Pages

          FAIRCHILD

          仙童半導體

          F6N80

          800V N-Channel MOSFET

          文件:1.30391 Mbytes 頁數(shù):7 Pages

          GOOD-ARK

          固锝電子

          F6N80

          Advanced MOSFET process technology

          文件:484.49 Kbytes 頁數(shù):8 Pages

          SILIKRON

          新硅能微電子

          F6N80

          Advanced MOSFET process technology

          文件:537.7 Kbytes 頁數(shù):8 Pages

          SILIKRON

          新硅能微電子

          F6N80

          ≥600V MOSFET

          WXDH

          東海半導體

          技術參數(shù)

          • P tot:

            45

          • I D:

            6

          • B VDSS:

            800

          • B VGSS:

            30

          • V TH:

            2

          • RDS(on):

            1.8

          • EAS:

            300

          供應商型號品牌批號封裝庫存備注價格
          KERSEMI
          TO-220F
          22+
          6000
          十年配單,只做原裝
          詢價
          DONGHAI
          23+
          TO-220F
          80000
          原裝正品,一級代理
          詢價
          KERSEMI
          23+
          TO-220F
          8400
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          KERSEMI
          25+
          TO-TO-220F
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          ST
          25+
          TO-220F
          16900
          原裝,請咨詢
          詢價
          ST
          26+
          TO-220F
          60000
          只有原裝 可配單
          詢價
          ST
          2022+
          42
          全新原裝 貨期兩周
          詢價
          ST
          19+
          TO-220F
          500
          進口原裝現(xiàn)貨假一賠萬力挺實單
          詢價
          ST
          2511
          TO-220F
          16900
          電子元器件采購降本30%!原廠直采,砍掉中間差價
          詢價
          ST/進口原
          17+
          TO-220F
          6200
          詢價
          更多F6N80供應商 更新時間2026-1-19 14:03:00
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