絲?。?a target="_blank" title="Marking" href="/6617/marking.html">6617；Package：CSPB2217-6；Enhancement Mode Power MOSFET

DESCRIPTION The F6617SPK uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated

文件：1.17282 Mbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子

Primary-Side-Regulation PWM with POWER MOSFET

文件：454.1 Kbytes 頁數(shù)：15 Pages

ONSEMI

安森美半導(dǎo)體

Primary-Side-Regulation PWM with POWER MOSFET

文件：454.1 Kbytes 頁數(shù)：15 Pages

ONSEMI

安森美半導(dǎo)體

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features ? Low Power Standby and

文件：91.67 Kbytes 頁數(shù)：7 Pages

INTERSIL