N-Channel Enhancement MOSFET

Features ? VDS=60V, ID=5A ? RDS(ON)=35mΩ@VGS=10V(Typ.) ? RDS(ON)=39mΩ@VGS=4.5V(Typ.) ? High Power and current handing capability ? Lead free product is acquired ? Surface Mount Package Main Applications ? Battery Protection ? Load Switch ? Power Management

文件：2.11551 Mbytes 頁數：5 Pages

GWSEMI

唯圣電子

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：412.33 Kbytes 頁數：8 Pages

INTERSIL

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：412.33 Kbytes 頁數：8 Pages

INTERSIL

N-Channel Enhancement Mode Power Mosfet

文件：4.75952 Mbytes 頁數：7 Pages

FOSTER

福斯特半導體