AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

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IRF

N-Channel PowerTrench? MOSFET 55V, 100A, 7.5m廓

文件：393.37 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =100A@ TC=25℃ ·Drain Source Voltage : VDSS=55V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

文件：343.27 Kbytes 頁數(shù)：8 Pages

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