New High Speed Decoupling Device Proadlizer PF/A Series

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NEC

瑞薩

RECTIFIER, up to 3kV, 350mA, 250ns

文件：121.72 Kbytes 頁數(shù)：3 Pages

SEMTECH

先之科

AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE

文件：74.34 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

絲?。?strong>F25；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION The SP6200 and SP6201 are CMOS LDOs designed to meet a broad range of applications that require accuracy, speed and ease of use. These LDOs offer extremely low quiescent current which only increases slightly under load, thus providing advantages in ground current performance over bipo

文件：144.42 Kbytes 頁數(shù)：10 Pages

SIPEX

絲?。?strong>f25；Package：SOT753；Bus buffer/line driver; 3-state

1. General description XC7SH125 is a high-speed Si-gate CMOS device. It provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH at OE causes the output to assume a high-impedance OFF-state. 2. Features and bene

文件：228.95 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲?。?strong>F25；Package：SOD-123F；Schottky Barrier Rectifiers

文件：398.88 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲印：F25；2.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V

文件：437.48 Kbytes 頁數(shù)：3 Pages

PACELEADER

霈峰

絲?。?strong>F25；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

文件：426.37 Kbytes 頁數(shù)：17 Pages

SIPEX

MEDIUM POWER CONTROL APPLICATIONS

MEDIUM POWER CONTROL APPLICATIONS ● Repetitive Peak Off?State Voltage: VDRM = 400V, 600 V Repetitive Peak Reverse Voltage: VRRM = 400V, 600 V ● Average On?State Current: IT (AV) = 25 A ● Isolation Voltage: VIsol = 1500 V AC

文件：239.28 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

4Mbit (512Kx8) 3V Only Serial Flash Memory

GENERAL DESCRIPTION The F25L004A is a 4 Megabit 3V only CMOS Serial Flash memory device. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. The F25L004A features a sector erase architecture. The device memory array is divided into 128 uniform sectors wi

文件：379.02 Kbytes 頁數(shù)：32 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司