| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
F2012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim 文件:37.55 Kbytes 頁數(shù):2 Pages | POLYFET | POLYFET | |
F2012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER 10Watts Single Ended General Description\nSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\"TMrocess features gold metal for greatly extended lifetim | Polyfet RF Devices | Polyfet RF Devices | |
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲印:F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F2012;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER 1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture, 文件:2.35537 Mbytes 頁數(shù):102 Pages | TI 德州儀器 | TI |
技術(shù)參數(shù)
- Output V:
5.0 VDC
- Output I:
4
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
POLYFEI |
2019+ |
SMD |
6992 |
原廠渠道 可含稅出貨 |
詢價 | ||
POLYFET |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價 | |||
POLYFEI |
23+ |
高頻管 |
280 |
專營高頻管模塊,全新原裝! |
詢價 | ||
POLYFET |
24+ |
23 |
詢價 | ||||
POLYFET |
24+ |
285 |
現(xiàn)貨供應(yīng) |
詢價 | |||
TI/德州儀器 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
TI/德州儀器 |
2447 |
TSSOP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
TI |
23+ |
QFN-16 |
24546 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
TI |
25+ |
TSSOP1.. |
114 |
全新現(xiàn)貨 |
詢價 | ||
FERRAZ/羅蘭 |
23+ |
888 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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