絲印：F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲?。?strong>F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲?。?strong>F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲?。?strong>F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/f2001t/marking.html">F2001T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲印：F2001T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲印：F2001T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/f2001t/marking.html">F2001T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES ? Low Supply Voltage Range 1.8 V to 3.6 V ? Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA ? Five Power-Saving Modes ? Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs ? 16-Bit RISC Architecture,

文件：2.35537 Mbytes 頁數(shù)：102 Pages

TI

德州儀器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet? process features gold metal for greatly extended lifetim

文件：37.85 Kbytes 頁數(shù)：2 Pages

POLYFET

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: ? 20W Output Power ? 2:1 Input Voltage Range ? 1,500 VDC Isolation ? Single & Dual Outputs ? Efficiency to 86 ? Compact 1.6 x 2 In. Case ? -40°C to +71°C Operation ? Industry Standard Pin-Out ? Lowest Cost!!

文件：225.6 Kbytes 頁數(shù)：2 Pages

MPD