| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t 文件：566.64 Kbytes 頁數(shù)：16 Pages | TI 德州儀器 | TI | ||
絲?。?strong>F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t 文件：566.64 Kbytes 頁數(shù)：16 Pages | TI 德州儀器 | TI | ||
絲印：F112；Package：SOIC；DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description The SN74F112 contains two independent J-K negative-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the outputs regardless of the levels of t 文件：566.64 Kbytes 頁數(shù)：16 Pages | TI 德州儀器 | TI | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime 文件：44.67 Kbytes 頁數(shù)：2 Pages | POLYFET | POLYFET | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS | ||
50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p 文件：2.084909 Mbytes 頁數(shù)：22 Pages | RENESAS 瑞薩 | RENESAS |
詳細參數(shù)
- 型號：
F112
- 功能描述：
觸發(fā)器 Dual Neg-Edge-Trig J-K Flip-Flop
- RoHS：
否
- 制造商：
Texas Instruments
- 電路數(shù)量：
2
- 邏輯系列：
SN74
- 邏輯類型：
D-Type Flip-Flop
- 極性：
Inverting, Non-Inverting
- 輸入類型：
CMOS
- 傳播延遲時間：
4.4 ns
- 高電平輸出電流：
- 16 mA
- 低電平輸出電流：
16 mA
- 電源電壓-最大：
5.5 V
- 最大工作溫度：
+ 85 C
- 安裝風(fēng)格：
SMD/SMT
- 封裝/箱體：
X2SON-8
- 封裝：
Reel
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
SOIC-16 |
7786 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 | ||
TI |
25+ |
SOP16 |
2500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
TEXASINSTRU |
24+ |
原封裝 |
482 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
TI |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
TI |
24+ |
SOP3.9mm |
16502 |
詢價 | |||
TI |
24+/25+ |
2500 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
TMS |
06+ |
SOIC |
1000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
TI |
25+ |
SOP |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
TI |
23+ |
SOP16 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
TI |
20+ |
7671 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價 |
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