PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

10 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS

[Fci] Features ■ HIGH CURRENT CAPABILITY WITH LOW VF ■ SUPERIOR METAL PROCESS ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ MEETS UL SPECIFICATION 94V-0

文件：153.34 Kbytes 頁數(shù)：4 Pages

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10 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS

Features ■ HIGH CURRENT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0

文件：139.17 Kbytes 頁數(shù)：2 Pages

FCI

富加宜

10 Amp High Voltage SCHOOTTKY BARRIER RECTIFIERS

Features ■ HIGH CURRENT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0

文件：198.59 Kbytes 頁數(shù)：2 Pages

FCI

富加宜