Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

? Advanced Process Technology ? Ultra Low On-Resistance ? Dynamic dv/dt Rating ? 175°C Operating Temperature ? Fast Switching ? Fully Avalanche Rated Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

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IRF

HEXFET? Power MOSFET

Description\nAdvanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, prov

Infineon

英飛凌

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11m? ID = 85A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：211.92 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：146.82 Kbytes 頁數(shù)：10 Pages

IRF

10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier ? Glass Passivated Junction ? UL recognized under component index file number E130180 ? Terminals: FASTON ① ? Terminals: WIRE LEADS ② ? Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

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