| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC 文件：420.42 Kbytes 頁(yè)數(shù)：7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC 文件：420.42 Kbytes 頁(yè)數(shù)：7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC 文件：420.42 Kbytes 頁(yè)數(shù)：7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
絲印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature 文件：516.62 Kbytes 頁(yè)數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/f1016/marking.html">F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature 文件：516.62 Kbytes 頁(yè)數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/f1016/marking.html">F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature 文件：516.62 Kbytes 頁(yè)數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/f1016/marking.html">F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array 文件：14.79935 Mbytes 頁(yè)數(shù)：292 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/f1016/marking.html">F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array 文件：14.79935 Mbytes 頁(yè)數(shù)：292 Pages | TI 德州儀器 | TI | ||
絲印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array 文件：14.79935 Mbytes 頁(yè)數(shù)：292 Pages | TI 德州儀器 | TI | ||
HEXFET? Power MOSFET Description\nAdvanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, prov | Infineon 英飛凌 | Infineon |
技術(shù)參數(shù)
- 觸點(diǎn)數(shù)量：
6
- 鎖定特性：
翻蓋式
- 安裝類型：
臥貼
- 觸點(diǎn)類型：
下接
- 板上高度：
2.24mm
- 接入柔性電纜厚度：
0.3mm
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
CAN3 |
1550 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FUJITSU |
24+ |
DIP-8 |
250 |
詢價(jià) | |||
NEC |
專業(yè)鐵帽 |
CAN3 |
1550 |
原裝鐵帽專營(yíng),代理渠道量大可訂貨 |
詢價(jià) | ||
NEC |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票 |
詢價(jià) | ||
FUJI |
22+ |
DIP |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
N/A |
25+ |
DIP8 |
550 |
全新原裝正品支持含稅 |
詢價(jià) | ||
12+ |
TO-263 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | |||
FAI |
23+ |
DIP/16/磁 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
FSC |
25+ |
DIP16(陶瓷) |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
原廠 |
23+ |
DIP16 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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