GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features ? Typ. total radiant power: 15 mW @ 100 mA in TOPLED? package ? Chip size 300 x 300 μm2 ? Very highly efficient GaAs LED ? Good linearity (Ie = f [IF]) at high currents ? DC or pulsed operations are possible ? High reliability ? High pulse handling capability Applications ? M

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OSRAM

艾邁斯歐司朗

N-Ch 100V Fast Switching MOSFETs

Features ? Advanced Trench MOS Technology ? 100 EAS Guaranteed ? Fast Switching Speed ? Green Device Available Applications ? High Frequency Switching and Synchronous Rectification. ? DC/DC Converter.

文件：628.16 Kbytes 頁數(shù)：4 Pages

FETEK

臺灣東沅

N-Ch 100V Fast Switching MOSFETs

Features? Advanced Trench MOS Technology ? 100 EAS Guaranteed ? Fast Switching Speed ? Green Device Available Applications High Frequency Switching and Synchronous Rectification. DC/DC Converter.

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FETEK

臺灣東沅

N-Ch 100V Fast Switching MOSFETs

Description The FKF0094 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.

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FETEK

臺灣東沅