Evaluating the ADL8142 GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz

GENERAL DESCRIPTION The ADL8142-EVALZ consists of a 4-layer printed circuit board (PCB) fabricated from 8 mil thick, Rogers 4003C and Isola 370HR, copper clad, forming a nominal thickness of 62 mils. The RFIN and RFOUT ports on the ADL8142-EVALZ are populated with 2.92 mm, female coaxial conn

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E-Band Power Amplifier With Power Detector

GENERAL DESCRIPTION The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GH

文件：318.23 Kbytes 頁數(shù)：16 Pages

AD

亞德諾

E-Band Power Amplifier With Power Detector

GENERAL DESCRIPTION The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GH

文件：318.23 Kbytes 頁數(shù)：16 Pages

AD

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Avikrimp??Quick Disconnect, Female, for 12-14 (3.30-2.00) Wire, Box, Tab 6.35mm(.250) x 0.81mm (.032)

文件：238.24 Kbytes 頁數(shù)：2 Pages

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