TSOT23-5封裝升壓轉(zhuǎn)換器 - 內(nèi)置18V功率開關(guān)

EUP2570是一顆工作于1MHz的電流模式升壓轉(zhuǎn)換器，可為L(zhǎng)CD面板提供電壓偏置，或者是中等功率升壓電源。EUP2570內(nèi)置18V/0.19Ω功率管以及2.0A的電流極限，使其可以在很大負(fù)載范圍提供高的效率和高的功率密度，同時(shí)，EUP2570最高電壓輸出可達(dá)17V。\nEUP2570內(nèi)置多種保護(hù)功能，如過流、欠壓、過溫，以及過壓，在輸出過載時(shí)能提供及時(shí)的保護(hù)。\nEUP2570采用TSOT23-5封裝，為節(jié)約板上空間和總體成本提供良好的解決方案。 ?輸入電壓范圍：2.6V~5.5V\n?18V過壓保護(hù)\n?峰值效率達(dá)88%\n?輸出電壓可調(diào)\n?內(nèi)置18V/0.19Ω功率管\n?1MHz開關(guān)頻率\n?2A電流極限\n?內(nèi)置軟啟動(dòng)\n?搭配小尺寸電感和電容\n?采用TSOT23-5封裝\n?兼容RoHS指令，100%無鉛封裝;

Eutech

德信科技

1MHz Boost Regulator with 18V Integrated FET Switch in Tiny SOT-23

文件：72.88 Kbytes 頁數(shù)：1 Pages

EUTECHEutech Microelectronics Inc

德信科技德信科技股份有限公司

150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster sw

文件：81.69 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.82 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 4.7 A, 150 V. RDS(ON) = 80 m? @ VGS = 10 V RDS(ON) = 90 m? @ VGS = 6 V ? Low gate charge

文件：99.92 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體