絲印：B2；Package：DFN1006；1-Line Bi-directional TVS Diode

Features Ultra small package: 1.0x0.6x0.5mm Ultra low capacitance: 15pF typical Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge:

文件：1.90877 Mbytes 頁數(shù)：4 Pages

LEIDITECH

雷卯電子

Single line low capacitance TRANSIL??for ESD protection

Description The ESDALC6V1-1BM2 is a bidirectional single line TVS diode designed to protect the datalines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Features ■ Single line low c

文件：149.76 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

I-Line Bi-directional TVS Diode

Features ? Ultra low capacitance: 15pF typical ? Ultra low leakage: nA level ? Low operating voltage: +5V ? Low clamping voltage ? 2-pin leadless package ? Complies with following standards: ? - IEC 61000-4-2 (ESD) immunity test Air discharge: ￡30kV Contact discharge: ￡30kV ~IEC61000-4-5

文件：1.30435 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

Single line low capacitance TRANSIL??for ESD protection

Description The ESDALC6V1-1BT2 is a bidirectional single line TVS diode designed to protect the datalines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Features ■ 1 line low capacitance T

文件：45.6 Kbytes 頁數(shù)：3 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Single-line low capacitance Transil??for bidirectional ESD protection

Description The ESDALC6V1-1BU2 is a bidirectional single line TVS diode designed to protect data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Features ■ Breakdown voltage VBR = 6.1

文件：143.38 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/a5/marking.html">A5；Package：DFN0603；1- Line Bi-directional TVS Diode

Features Ultra low leakage: nA level Operating voltage: 5V Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: 8kV RoHS Compliant Low Clamping Voltage – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) A

文件：1.57519 Mbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/e/marking.html">E；Package：SOD-923；UNIDIRECTIONAL TVS DIODE

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) –IEC61000-4-5 (Lightning) 7.5A (8/20 μs) R o H S Complian

文件：328.44 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

Single line low capacitance Transil for ESD protection

Description The ESDALC6V1-1M2 is a unidirectional single line TVS diode designed to protect the data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Features ■ Single line low capacit

文件：147.89 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Single-line low capacitance Transil for ESD protection

Description The ESDALC6V1-1U2 is a unidirectional single line TVS diode designed to protect the data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Features ■ Breakdown voltage VBR =

文件：198.77 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

4 and 5 line low capacitance TRANSIL array for ESD protection

Description The ESDALC6V1xxM6 are monolithic arrays designed to protect up to 4 or 5 lines against ESD transients. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Features ■ High ESD protection level ■ High integr

文件：179.29 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體