Rated peak single pulse transient current Capacitance

文件：351.52 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

EOS and ESD Transil??protection for charger and battery port

Description The ESDA-1K is a single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electronics devices subject to ESD and EOS transient overvoltages. Features ■ Breakdown voltage: 12 V, 18 V ■ Unidirectional device ■ H

文件：167.22 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

EOS and ESD Transil protection for charger and battery port

Description The ESDA-1K is a single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electronics devices subject to ESD and EOS transient overvoltages. Features ■ Breakdown voltage: 12 V, 18 V ■ Unidirectional device ■ H

文件：168.92 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/pc/marking.html">PC；Package：DFN1006P3；LOW CAPACITANCE TVS DIODE ARRAY

文件：422.93 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/w3/marking.html">W3；Package：SOT-553；LOW CAPACITANCE TVS DIODE ARRAY

文件：187.26 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/sda/marking.html">SDA；Package：DFN1616P6；LOW CAPACITANCE TVS DIODE ARRAY

文件：251.14 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

2-Line Bi-directional Low Capacitance TVS Diode

文件：177.82 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/ht/marking.html">HT；Package：SOD-523；Bidirectional TVS Diode

文件：1.68284 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

EOS and ESD Transil? protection for charger and battery port

ESDA1K是一款單線Transil二極管，設(shè)計(jì)用于保護(hù)便攜式設(shè)備和小型電子設(shè)備中的集成電路，免受ESD和EOS瞬態(tài)過壓的影響。\n ? 擊穿電壓：12 V，18 V\n? 高峰值功耗：450 W（8/20 μs波形）\n? 低泄漏電流（5 V時(shí)， 2\n? High EOS and ESD protection level\n? Suitable for high density board\n? 符合以下標(biāo)準(zhǔn)\n? 15 kV (air discharge)\n? MIL STD 883G - Method 3015-7 Class 3B? HBM (Human Body Model): ≥ 8 kV;

ST

意法半導(dǎo)體

ESD靜電保護(hù)元件

Leiditech

雷卯電子