Adaptateur pour cadenas

文件：45.96 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

絲印：EPA；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9005 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with output capacitance of 1μF to 10μF with ESR of up to 200mΩ. Features ? 300mA high performance LDO ? Excel

文件：546.02 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

絲?。?strong>EPA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.90188 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：EPA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?strong>EPA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 頁數(shù)：3 Pages

ANOVA

林朋科技

High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

文件：34.3 Kbytes 頁數(shù)：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET ? NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE ? +20.0dBm TYPICAL OUTPUT POWER ? 11.0dB TYPICAL POWER GAIN AT 18GHz ? TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz ? 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE ? Si3N4 PASSIV

文件：24.89 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

High Efficiency Heterojunction Power FET

FEATURES ? VERY HIGH fmax: 120GHz ? +20.0dBm TYPICAL OUTPUT POWER ? 13.0dB TYPICAL POWER GAIN AT 18 GHz ? TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz ? 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE ? Si3N4 PASSIVATION ? ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTR

文件：100.54 Kbytes 頁數(shù)：3 Pages

EXCELICS

High Efficiency Heterojunction Power FET

FEATURES ? Non-Hermetic Low Cost Ceramic 70mil Package ? +20.0 dBm Output Power at 1dB Compression ? 11.0 dB Power Gain at 18GHz ? Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz ? 0.3 x 180 Micron Recessed “Mushroom” Gate ? Si3N4 Passivation ? Advanced Epitaxial Heterojun

文件：99.43 Kbytes 頁數(shù)：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

文件：46.89 Kbytes 頁數(shù)：2 Pages

EXCELICS