RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP Features ? High cut-off frequency : fT=5.5GHz typ ? High gain : ?S21e?2=11dB typ (f=1GHz) =19dB typ (f=400MHz) ? Ultrasmall package permitting applied sets to be small and slim ? Halogen free compliance

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ONSEMI

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NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications Features ? High cut-off frequency : fT=5.5GHz typ ? High gain : ?S21e?2=10dB typ (f=1GHz)

文件：54.68 Kbytes 頁數(shù)：6 Pages

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NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features ? High cutoff frequency : fT= 5.5GHz typ. ? High gain : ?S21e?2=10dB typ (f=1GHz). ? Ultrasmall package permitting applied sets to be small and slim.

文件：53.61 Kbytes 頁數(shù)：6 Pages

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RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features ? Low-noise : NF=1.5dB typ (f=2GHz) ? High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) ? Low-voltage operation ? High gain : ?S21e?2=9.5dB typ (f=2GHz) ? Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) ? Halogen f

文件：437.71 Kbytes 頁數(shù)：9 Pages

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安森美半導(dǎo)體

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features ? Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. ? The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one p

文件：69.03 Kbytes 頁數(shù)：6 Pages

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NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features ? Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly ? The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package ? Optimal for differential amplification due to excellent thermal

文件：67.68 Kbytes 頁數(shù)：6 Pages

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RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features ? Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly ? The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package ? Optimal for differential amplification due to excellent thermal

文件：479.86 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Thick-Film Hybrid IC 3-Phase Stepping Motor Driver

Overview The STK673-011-E is a 3-phase stepping motor driver hybrid IC with built-in microstep controller having a bipolar constant current PWM system, in which a power MOSFET is employed at an output stage. It includes a 3-phase distributed controller for a 3-phase stepping motor to realize a s

文件：131.26 Kbytes 頁數(shù)：15 Pages

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N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ? Low ON-resistance ? Best suited for LiB charging and discharging switch ? Common-drain type ? 2.5V drive ? Protection diode in

文件：99.43 Kbytes 頁數(shù)：4 Pages

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N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features ? Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. ? [MOSFET] ? Low ON-resistance ? Ultrahigh-speed switching ? 2.5V driv

文件：71.85 Kbytes 頁數(shù)：5 Pages

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