Bipolar Transistor -30V, -3A, Low VCE(sat), PNP Single CPH6

Features ? Adoption of MBIT process ? High current capacitance ? Low collector-to-emitter saturation voltage ? High-speed switching ? Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) ? High allowable power dissipation Applications ? Relay drivers, la

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ONSEMI

安森美半導(dǎo)體

Bipolar Transistor

文件：651.84 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

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ZETEX

Switching Transistor

Features ● 625mW power dissipation. ● IC CONT 2.5A. ● IC up to 10A peak pulse current. ● Excellent hfe characteristics up to 10A (pulsed). ● Extremely low saturation voltage e.g. 10mV typ.. ● Exhibits extremely low equivalent on-resistance; RCE(sat) .

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KEXIN

科信電子

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features ? BVCEO > -12V ? IC = -2.5A Continuous Collector Current ? ICM = -10A Peak Pulse Current ? Low Saturation Voltage E.g. -17mV Max @ IC = -100mA. ? RCE(sat) = 72m? at 2.5A for a low equivalent on-resistance ? 625mW power dissipation ? hFE characterised up to -10A for high current gai

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DIODES

美臺(tái)半導(dǎo)體