4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur

文件：273.37 Kbytes 頁數(shù)：35 Pages

EON

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4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur

文件：273.37 Kbytes 頁數(shù)：35 Pages

EON

宜揚科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur

文件：273.37 Kbytes 頁數(shù)：35 Pages

EON

宜揚科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur

文件：273.37 Kbytes 頁數(shù)：35 Pages

EON

宜揚科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040A featur

文件：273.37 Kbytes 頁數(shù)：35 Pages

EON

宜揚科技