| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
EMD11N15E | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：458.81 Kbytes 頁數(shù)：6 Pages | EXCELLIANCE 杰力科技 | EXCELLIANCE | |
EMD11N15E | Power MOSFETs -Middle Voltage MOSFET(40V~399V) | Excelliance MOS 杰力科技 | Excelliance MOS | |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free 文件：365.58 Kbytes 頁數(shù)：6 Pages | EXCELLIANCE 杰力科技 | EXCELLIANCE | ||
15V NPN SILICON LOW SATURATION TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES ? Extremely Low Equival 文件：412.59 Kbytes 頁數(shù)：6 Pages | ZETEX | ZETEX | ||
15V NPN SILICON LOW SATURATION TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES ? Extremely Low Equival 文件：422.75 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES |
技術(shù)參數(shù)
- Configuration：
Single
- Channel：
N
- V(BR)DSS(V)：
150
- VGS(±V)：
20
- VGS(th)max(V)：
4
- ID(ON)(A)：
120
- RDS(ON) mΩ max：
11
- Ciss typ.(pF)：
4484
- Crss typ.(pF)：
67
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