N??hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 8mΩ ID 110A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：230.39 Kbytes 頁數(shù)：5 Pages

EXCELLIANCE

杰力科技

N??hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 8mΩ ID 60A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：210.74 Kbytes 頁數(shù)：6 Pages

EXCELLIANCE

杰力科技

N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 頁數(shù)：6 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-Channel Enhancement Mode Power MOSFET

Description The G08N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06459 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體