EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

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德州儀器

MOSFET Gate Driver

文件：767.08 Kbytes 頁數(shù)：15 Pages

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德州儀器

MOSFET 柵極驅(qū)動器

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7- ? Compound CMOS and Bipolar Outputs Reduce Output Current Variation\n? 7 A Sink/3 A Source Current\n? Fast Propagation Times (25 ns Typical)\n? Fast Rise and Fall Times (14 ns/12 ns Rise Fall with 2 nF Load)\n? Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device\n? S;

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sa3b/marking.html">SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sa3b/marking.html">SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sa3b/marking.html">SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sa3b/marking.html">SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sa3b/marking.html">SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1? Compound CMOS and Bipolar Outputs Reduce Output Current Variation ? 7 A Sink/3 A Source Current ? Fast Propagation Times (25 ns Typical) ? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) ? Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 頁數(shù)：17 Pages

TI

德州儀器