256K x 16 Low Power SRAM

Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-po

文件：158.49 Kbytes 頁數(shù)：11 Pages

ETRON

鈺創(chuàng)科技

256K x 16 Low Power SRAM

Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-po

文件：158.49 Kbytes 頁數(shù)：11 Pages

ETRON

鈺創(chuàng)科技

256K x 16 Low Power SRAM

Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-po

文件：158.49 Kbytes 頁數(shù)：11 Pages

ETRON

鈺創(chuàng)科技

256K x 16 Low Power SRAM

Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-po

文件：158.49 Kbytes 頁數(shù)：11 Pages

ETRON

鈺創(chuàng)科技

256K x 16 Low Power SRAM

Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-po

文件：158.49 Kbytes 頁數(shù)：11 Pages

ETRON

鈺創(chuàng)科技

256K x 16 Low Power SRAM

EtronTech

鈺創(chuàng)科技