高壓600V2A半橋驅(qū)動(dòng)芯片

EG3113D 是一款高性價(jià)比的大功率 MOS 管、IGBT 管柵極驅(qū)動(dòng)專用芯片，內(nèi)部集成了邏輯信號(hào)輸入處理電路、死區(qū)時(shí)控制電路、閉鎖電路、電平位移電路、脈沖濾波電路及輸出驅(qū)動(dòng)電路，專用于無刷電機(jī)控制器中的驅(qū)動(dòng)電路。高端工作電壓可達(dá) 600V，低端 Vcc 的電源電壓范圍寬 8V - 20V，靜態(tài)電流約 300uA。該芯片具有閉鎖功能防止輸出功率管同時(shí)導(dǎo)通，輸入通道 HIN 內(nèi)建了一個(gè) 200K 下拉電阻，LIN 內(nèi)建了上拉 5V 高電位，在輸入懸空時(shí)使上、下功率 MOS 管處于關(guān)閉狀態(tài)，輸出電流能力 IO+/- 2/2.5A，采用 SOP8 封裝。 ? 高端懸浮自舉電源設(shè)計(jì)，耐壓可達(dá) 600V\n? 適應(yīng) 5V、3.3V 輸入電壓\n? 最高頻率支持 500KHZ\n? 低端 VCC 電壓范圍 8V - 20V\n? 輸出電流能力 IO+/- 2A/2.5A\n? 內(nèi)建死區(qū)控制電路\n? 自帶閉鎖功能，徹底杜絕上、下管輸出同時(shí)導(dǎo)通\n? HIN 輸入通道高電平有效，控制高端 HO 輸出\n? LIN 輸入通道低電平有效，控制低端 LO 輸出\n? 外圍器件少\n? 封裝形式：SOP - 8\n? 無鉛無鹵符合 ROHS 標(biāo)準(zhǔn);

EGmicro

屹晶微電子

NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features ? 100 mA Output Current Capability ? Built-in Bias Resistor (R1 = 2.2 kΩ, R2 = 47 kΩ) Application ? Switching, Interface, and

文件：46.9 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

仙童半導(dǎo)體

NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features ? 100 mA Output Current Capability ? Built-in Bias Resistor (R1 = 2.2 kΩ, R2 = 47 kΩ) Application ? Switching, Interface, and

文件：248.25 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features ? 100 mA Output Current Capability ? Built-in Bias Resistor (R1 = 2.2 kΩ, R2 = 47 kΩ) Application ? Switching, Interface, and

文件：248.25 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體