| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
ECH8659 | N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? 4V drive ? Composite type, 文件：312.8 Kbytes 頁(yè)數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
ECH8659 | Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? 4V drive ? Composite type, 文件：471 Kbytes 頁(yè)數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
ECH8659 | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ? 4V drive ? Composite type, facilitating high-density mounting ? Halogen free compliance ? Protection diode in 文件：59.98 Kbytes 頁(yè)數(shù)：4 Pages | SANYO 三洋 | SANYO | |
ECH8659 | General-Purpose Switching Device Applications 文件：116.76 Kbytes 頁(yè)數(shù)：7 Pages | SANYO 三洋 | SANYO | |
ECH8659 | 雙 N 溝道功率 MOSFET 30V，7A，24mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. ? RoHS compliance\n? Environmental Consideration\n? Low On-Resistance\n? Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n? ESD Diode-Protected Gate\n? ESD Resistance\n? 4.0V drive\n? Composite type, Facilitating high-density mounting; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? 4V drive ? Composite type, 文件：312.8 Kbytes 頁(yè)數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? 4V drive ? Composite type, 文件：471 Kbytes 頁(yè)數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? 4V drive ? Composite type, 文件：471 Kbytes 頁(yè)數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
General-Purpose Switching Device Applications 文件：116.76 Kbytes 頁(yè)數(shù)：7 Pages | SANYO 三洋 | SANYO | ||
Package：8-SMD，扁平引線；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 陣列 描述：MOSFET 2N-CH 30V 7A ECH8 | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Dual
- V(BR)DSS Min (V)：
30
- VGS Max (V)：
20
- VGS(th) Max (V)：
2.6
- ID Max (A)：
7
- PD Max (W)：
1.3
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
Q1=Q2=41
- RDS(on) Max @ VGS = 10 V(mΩ)：
Q1=Q2=24
- Qg Typ @ VGS = 10 V (nC)：
11.8
- Ciss Typ (pF)：
710
- Package Type：
SOT-28 FL/ECH-8
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2025+ |
ECH-8 |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢價(jià) | ||
ON |
2022+ |
SOT-28 FL / ECH-8 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
SANYO/三洋 |
25+ |
ECS8 |
71 |
原裝正品,假一罰十! |
詢價(jià) | ||
SANYO/三洋 |
25+ |
ECS8 |
71 |
原裝正品,假一罰十! |
詢價(jià) | ||
ON/安森美 |
22+ |
ECH-8 |
20000 |
只做原裝 |
詢價(jià) | ||
SANYO |
17+ |
SMD-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
24+/25+ |
2895 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
SANYO |
24+ |
ECS8 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
ONSemiconductor |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
SSOP-8 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) |
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