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          首頁(yè) >EC736014>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          EC736014

          60V 60A N-Channel

          文件:487.57 Kbytes 頁(yè)數(shù):6 Pages

          E-CMOS

          飛虹高科

          EC736014AT

          60V 60A N-Channel

          文件:487.57 Kbytes 頁(yè)數(shù):6 Pages

          E-CMOS

          飛虹高科

          EC736014D

          60V ,60A N-Channel

          文件:368.1 Kbytes 頁(yè)數(shù):7 Pages

          E-CMOS

          飛虹高科

          EC736014DA4R

          60V ,60A N-Channel

          文件:368.1 Kbytes 頁(yè)數(shù):7 Pages

          E-CMOS

          飛虹高科

          EC736014J7

          60V ,40A N-Channel

          文件:170.53 Kbytes 頁(yè)數(shù):4 Pages

          E-CMOS

          飛虹高科

          EC736014J7F2R

          60V ,40A N-Channel

          文件:170.53 Kbytes 頁(yè)數(shù):4 Pages

          E-CMOS

          飛虹高科

          EC736014D

          60V,60A N-Channel MOSFET

          It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n? Advanced MOSFET process technology\nn? Special designed for PWM, load switching and\n???? general purpose applications\nn? Ultra low on-resistance with low gate charge\nn? Fast switching and reverse body recovery\nn? 175℃ operating temperature\n?;

          E-CMOS

          飛虹高科

          EC736014J7

          60V,40A N-channel MOSFET

          It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n? Advanced MOSFET process technology\nn? Special designed for PWM, load switching and\n???? general purpose applications\nn? Ultra low on-resistance with low gate charge\nn? Fast switching and reverse body recovery\nn? 175℃ operating temperature\n?;

          E-CMOS

          飛虹高科

          技術(shù)參數(shù)

          • VDS(V):

            60

          • VGS(±V):

            20

          • RDS(ON)@VGS:

            12Ω@10V

          • ID(A):

            60

          • Package:

            TO252

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          E-MOS
          2022+
          TO-220
          32500
          原廠代理 終端免費(fèi)提供樣品
          詢價(jià)
          E-MOS
          20+
          TO-220
          32500
          現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
          詢價(jià)
          E-MOS
          23+
          TO-220
          32500
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          E-MOS
          23+
          SOP-8
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          E-MOS
          24+
          SOP8
          60000
          全新原裝現(xiàn)貨
          詢價(jià)
          更多EC736014供應(yīng)商 更新時(shí)間2026-1-19 14:03:00
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