絲?。?strong>P60；Package：SOT-23；PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

Features ? Epitaxial Planar Die Construction ? Complementary NPN Types Available (DDTD) ? Built-In Biasing Resistors, R1, R2 ? Lead Free/RoHS Compliant (Note 2)

文件：78.04 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體

絲印：P60；Package：SOD-323F；SURFACE MOUNT SCHOTTKY DIODES

FEATURES ? Extremely fast switching speed ? Very Low VF : 0.325V (Typ) at IF = 1mA ? Surface mount package ideally suited for autmatic insertion ? Lead free in compliance with EU RoHS 2011/65/EU directive ? Green molding compound as per IEC61249 Std. . (Halogen Free)

文件：69.44 Kbytes 頁數(shù)：3 Pages

PANJIT

強(qiáng)茂

絲?。?strong>P60；Package：SOD-323；SURFACE MOUNT SCHOTTKY DIODES

FEATURES Extremely fast switching speed Very Low VF : 0.325V (Typ) at IF = 1mA Surface mount package ideally suited for autmatic insertion Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

文件：581.1 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?strong>P60；Package：SOD-323；SURFACE MOUNT SCHOTTKY DIODES

文件：146.87 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲印：P605150；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/p605180/marking.html">P605180；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/p605250/marking.html">P605250；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/p605280/marking.html">P605280；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲印：P605300；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/p605330/marking.html">P605330；Package：DFN6；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA

The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no

文件：219.92 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導(dǎo)體