| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
EC2612 | 40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm PHEMT) technology. Gate width is 120μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to 文件：111.13 Kbytes 頁數(shù)：8 Pages | UMS | UMS | |
EC2612 | 40GHz Super Low Noise pHEMT 文件：140.18 Kbytes 頁數(shù)：8 Pages | UMS | UMS | |
EC2612 | 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description\nThe EC2612 is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm PHEMT) technology. Gate width is 120μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very 0.8dB minimum noise figure @ 18GHz\n1.5dB minimum noise figure @ 40GHz\n12dB associated gain @ 18GHz\n9.5dB associated gain @ 40GHz; | UMS | UMS | |
40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm PHEMT) technology. Gate width is 120μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to 文件：111.13 Kbytes 頁數(shù)：8 Pages | UMS | UMS | ||
40GHz Super Low Noise PHEMT Description The EC2612 is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm PHEMT) technology. Gate width is 120μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to 文件：111.13 Kbytes 頁數(shù)：8 Pages | UMS | UMS | ||
40GHz Super Low Noise pHEMT 文件：140.18 Kbytes 頁數(shù)：8 Pages | UMS | UMS | ||
40GHz Super Low Noise pHEMT ?\n The EC2612-99F is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm pHEMT) technology.\n Gate width is 120μm and the 0.15μm. T-shaped aluminium gate features low resistance and excellent reliability.\n The device shows a very high transconductance which lead | UMS | UMS |
技術(shù)參數(shù)
- RF Bandwidth (GHz) min-max：
DC - 40
- Noise Figure (dB)：
1.5
- Case：
Die
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
UMS |
24+ |
SMD |
1680 |
UMS專營進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
ECM |
24+ |
SOP-8 |
40000 |
詢價 | |||
ECM |
2002+ |
SOP-8 |
40000 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
ECM |
25+ |
SOP8 |
17500 |
普通 |
詢價 | ||
ECM |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ECM |
SOP-8 |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ECM |
23+ |
SOP-8 |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
ECM |
2025+ |
SOP-8 |
3550 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ECM |
2402+ |
SOP-8 |
8324 |
原裝正品!實(shí)單價優(yōu)! |
詢價 | ||
ECM |
23+ |
SOP-8 |
19900 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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