256K-Bit 2-WIRE SERIAL EEPROM

The EC24C128A/EC24C256A provides 131,072/262,144 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as16,384/32,768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation ar ? Wide Voltage Operation – VCC= 1.7V to 5.5V\r\n? Internally Organized:\r\n? Two-wire Serial Interface\r\n? Bidirectional Data Transfer Protocol\r\n? Write Protect Pin for Hardware Data Protection\r\n? Partial Page Writes Allowed\r\n? High-reliability\r\n? PDIP-8 ,SOP-8,MSOP-8 and TSSOP-8 packages;

E-CMOS

飛虹高科

128K/256K-bit 2-WIRE SERIAL CMOS EEPROM

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E-CMOS

飛虹高科

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

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FAIRCHILD

仙童半導(dǎo)體

256Kb FRAM Serial Memory

[Ramtron International Corporation] Description The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45

文件：102.64 Kbytes 頁數(shù)：13 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

256Kb FRAM Serial Memory

文件：98.1 Kbytes 頁數(shù)：12 Pages

RAMTRON