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          首頁 >E6D16065A>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          E6D16065A

          絲印:E6D16065A;Package:TO-220-2;E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:638.08 Kbytes 頁數:9 Pages

          WOLFSPEED

          E6D16065A

          裸芯片 MOSFET

          650 V, 16 A, TO-220-2 package, Automotive qualified, Discrete SiC Schottky Diode

          Wolfspeed(CREE)

          E6D16065G

          E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:558.13 Kbytes 頁數:9 Pages

          WOLFSPEED

          E6D16065H

          E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:560.08 Kbytes 頁數:9 Pages

          WOLFSPEED

          技術參數

          • Blocking Voltage:

            650 V

          • Current Rating:

            16 A

          • Forward Voltage(VF(type)):

            1.3 V

          • Maximum Continuous Current (IF):

            16 A

          • Package:

            TO-220-2

          • Qualification:

            Automotive

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          更多E6D16065A供應商 更新時間2026-1-19 16:06:00
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